Infineon AIKQ120N75CP2 75V N-Channel Power MOSFET: Datasheet, Application Circuit, and Features

The Infineon AIKQ120N75CP2 is a high-performance N-Channel Power MOSFET designed to deliver exceptional efficiency and reliability in demanding power management applications. With a voltage rating of 75V and a very low on-state resistance (RDS(on)) of just 1.2 mΩ, this MOSFET minimizes conduction losses, making it ideal for high-current switching scenarios. It is part of Infineon’s innovative OptiMOS™ 5 technology, which offers enhanced switching performance and thermal stability.

Key Features

One of the standout characteristics of the AIKQ120N75CP2 is its ultra-low RDS(on), which significantly reduces power dissipation and improves overall system efficiency. The device also features high current handling capability, supporting up to 600A pulsed drain current (IDM), making it suitable for applications requiring robust performance under extreme conditions. Additionally, its optimized switching behavior ensures reduced electromagnetic interference (EMI), which is critical for noise-sensitive environments.

Application Circuit

A typical application circuit for the AIKQ120N75CP2 includes its use in synchronous rectification circuits within switch-mode power supplies (SMPS). In such setups, the MOSFET is often employed in the low-side switch position, driven by a PWM controller IC. The circuit benefits from the device’s fast switching speed and low gate charge (Qg), allowing for higher frequency operation and reduced size of passive components. For motor control applications, it can be integrated into half-bridge or full-bridge configurations to drive DC motors efficiently.

Datasheet Overview

The datasheet for the AIKQ120N75CP2 provides comprehensive details including absolute maximum ratings, thermal characteristics, and switching performance graphs. Key parameters outlined are a continuous drain current (ID) of 120A at 25°C, a gate threshold voltage (VGS(th)) between 2.3V and 3.7V, and an operating junction temperature range from -55°C to 175°C. The document also emphasizes the device’s 100% avalanche tested robustness, ensuring reliability in overvoltage conditions.

ICGOOODFIND: The Infineon AIKQ120N75CP2 sets a high standard for power MOSFETs with its exceptional efficiency, low losses, and superior thermal performance, making it a top choice for advanced power systems.

Keywords: Power MOSFET, Low RDS(on), Synchronous Rectification, High Current Switching, OptiMOS™ 5