Infineon IRFH5007TRPBF: A High-Performance Power MOSFET for Advanced Switching Applications
The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. At the heart of many advanced power conversion systems, from server SMPS and telecom bricks to high-frequency DC-DC converters, lies the power MOSFET. The Infineon IRFH5007TRPBF stands out as a premier solution engineered to meet these rigorous challenges, offering a blend of ultra-low on-state resistance and exceptional switching performance.
This MOSFET is constructed using Infineon's advanced proprietary process technology, which is pivotal in achieving its remarkable characteristics. Housed in a robust and thermally efficient PQFN 5x6 mm package, the device is optimized for space-constrained applications without compromising on power handling. The package's low parasitic inductance is crucial for minimizing voltage spikes and ensuring stable operation at high switching frequencies.
A key metric for any power switch is power loss, which directly impacts system efficiency and thermal management. The IRFH5007TRPBF addresses this with an impressively low typical RDS(on) of just 1.8 mΩ at a 10 V gate drive. This ultra-low resistance significantly reduces conduction losses, allowing for higher current throughput with less heat generation. Furthermore, the device exhibits outstanding figures of merit (FOM), balancing low gate charge (Qg) and low output capacitance (Coss). This optimal balance is essential for achieving fast switching transitions, which in turn reduces switching losses—a critical factor in high-frequency operation.
The MOSFET's design also emphasizes robustness and reliability. It offers a high maximum drain-source voltage (VDS) of 100 V, providing ample headroom for 48 V input bus applications and safeguarding against voltage transients. Its exceptional thermal characteristics, facilitated by the package's exposed top and bottom, ensure efficient heat dissipation, enabling higher power operation and improved long-term reliability.
Designed for compatibility with modern digital PWM controllers, the IRFH5007TRPBF operates effectively with low gate drive voltages, making it suitable for designs aiming for the highest efficiency levels. Its performance makes it an ideal choice for critical roles such as the primary switch in isolated converters, synchronous rectification in secondary sides, and in high-current POL (Point-of-Load) converters.
ICGOOODFIND: The Infineon IRFH5007TRPBF is a superior power MOSFET that sets a high benchmark for performance in demanding switching applications. Its combination of ultra-low RDS(on), excellent switching characteristics, and robust thermal performance makes it an indispensable component for designers striving to push the boundaries of efficiency and power density in advanced power systems.
Keywords: Power MOSFET, Ultra-Low RDS(on), High-Frequency Switching, Power Efficiency, Thermal Management.
