Infineon IMW120R140M1H: A 140mΩ, 1200V SiC Power Module for High-Performance Applications

The relentless drive for greater efficiency, power density, and reliability in power electronics is fundamentally reshaping industries from industrial drives to renewable energy and electric mobility. At the forefront of this revolution are silicon carbide (SiC) semiconductors, and Infineon Technologies' IMW120R140M1H power module stands as a prime example of this advanced technology engineered for demanding, high-performance applications.

This module is a half-bridge configured pack that integrates two robust 1200V SiC MOSFETs. Its most striking feature is an ultra-low typical on-state resistance (RDS(on)) of just 140mΩ. This exceptionally low resistance is the key to its superior performance, as it directly translates to minimized conduction losses during operation. When combined with the inherent material advantages of SiC—which enable vastly faster switching speeds compared to traditional silicon IGBTs—the module achieves a dramatic reduction in overall power loss. This dual benefit of lower conduction and switching losses allows systems to operate at higher frequencies and efficiencies, which in turn enables designers to reduce the size and weight of passive components like inductors and heatsinks, significantly boosting overall power density.

The high blocking voltage of 1200V makes the IMW120R140M1H exceptionally versatile and robust, suitable for deployment in three-phase industrial motor drives, high-power solar and wind inverters, EV fast-charging infrastructure, and traction applications. The module’s low-loss characteristics ensure that systems run cooler and more reliably, even under strenuous conditions, enhancing their long-term operational lifespan.

Furthermore, the module is designed for ease of use and integration. It features a low-inducence design to suppress voltage overshoot during fast switching events and utilizes the industry-standard EASY1B package, which offers a compact footprint and low thermal resistance for effective cooling. This allows engineers to upgrade existing designs or create new ones with confidence, leveraging the performance of SiC without compromising on mechanical or thermal management.

ICGOO

The Infineon IMW120R140M1H is a high-performance SiC power module that sets a new benchmark for efficiency and power density. Its ultra-low 140mΩ RDS(on) and 1200V rating make it an ideal solution for cutting-edge applications demanding superior efficiency, compact size, and high reliability. By significantly reducing both conduction and switching losses, it empowers designers to create the next generation of power conversion systems.

Keywords:

1. Silicon Carbide (SiC)

2. Ultra-Low RDS(on)

3. High Power Density

4. High-Efficiency

5. 1200V Rating