Infineon ISC017N04NM5: A High-Performance N-Channel MOSFET for Next-Generation Power Applications

The relentless drive for higher efficiency, greater power density, and enhanced reliability in modern electronics places immense demands on power switching components. At the heart of this evolution is the power MOSFET, a critical enabler for applications ranging from server and telecom power supplies to motor drives and battery management systems. The Infineon ISC017N04NM5 stands out as a premier N-channel MOSFET engineered to meet and exceed these challenging requirements.

Built on Infineon's advanced OptiMOS 5 40 V technology, this MOSFET sets a new benchmark for performance in its class. The core of its superiority lies in its exceptionally low figure-of-merit (FOM), achieved by optimizing the trade-off between on-state resistance (RDS(on)) and gate charge (Qg). With a maximum RDS(on) of just 1.7 mΩ at 10 V, the ISC017N04NM5 minimizes conduction losses, allowing for more efficient power transfer and reduced heat generation. This is particularly crucial in high-current applications where even marginal losses can lead to significant thermal challenges.

Complementing its low conduction loss is its outstanding switching performance. The low gate charge ensures rapid switching transitions, which directly translates to reduced switching losses at high frequencies. This capability is indispensable for designers aiming to increase the switching frequency of their power topologies, a key strategy for reducing the size and cost of passive components like inductors and transformers, thereby achieving higher power density.

The device’s 40 V drain-source voltage (VDS) rating makes it an ideal candidate for a wide array of industrial and computing applications, including synchronous rectification in switch-mode power supplies (SMPS), DC-DC converters, and motor control circuits. Its robust design ensures a wide safe operating area (SOA) and high avalanche ruggedness, providing designers with a critical margin of reliability in demanding environments.

Furthermore, the MOSFET is housed in an SuperSO8 package, which offers an excellent power-to-size ratio. This package features a low parasitic inductance and exposed top for superior thermal performance, enabling more effective heat dissipation and contributing to higher overall system reliability.

ICGOODFIND: The Infineon ISC017N04NM5 is a top-tier power MOSFET that embodies the future of power management. By masterfully balancing ultra-low RDS(on) with minimal switching losses, it delivers unparalleled efficiency and power density, making it an exceptional choice for next-generation power applications where performance and reliability are non-negotiable.

Keywords: OptiMOS 5, Low RDS(on), High Efficiency, Power Density, SuperSO8 Package.