Infineon BSC040N10NS5ATMA1: High-Performance OptiMOS™ 5 Power MOSFET for Efficient Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronics places immense demands on power switching components. Addressing this challenge head-on, the Infineon BSC040N10NS5ATMA1 stands out as a premier solution in the OptiMOS™ 5 100 V family. This power MOSFET is engineered to set new benchmarks in performance, enabling designers to create more compact, cooler-running, and highly efficient power conversion systems.

A cornerstone of this device's superiority is its exceptionally low figure-of-merit (FOM), achieved by optimizing the trade-off between on-state resistance (R DS(on)) and gate charge (Q G). The BSC040N10NS5 boasts a maximum R DS(on) of just 4.0 mΩ at 10 V, significantly reducing conduction losses. This allows for more current to be handled in a smaller footprint, directly contributing to higher overall system efficiency. Simultaneously, the low gate charge ensures swift switching transitions, which is critical for minimizing switching losses, especially in high-frequency applications such as switch-mode power supplies (SMPS), DC-DC converters, and motor drives.

The benefits extend beyond raw electrical characteristics. The OptiMOS™ 5 technology provides enhanced robustness and reliability. The device features a high maximum drain current (I D) of 100 A, offering a substantial margin for demanding operational conditions. Its superior body diode robustness ensures safe operation during hard commutation events, a vital feature in bridge topology applications. Furthermore, the MOSFET is qualified according to the highest quality standards, guaranteeing long-term performance and durability in industrial, telecom, and computing environments.

From a design perspective, the component is housed in a SuperSO8 package (PG-TDSON-8), which offers an excellent power-to-size ratio. This advanced packaging not only improves thermal performance by providing a very low thermal resistance but also allows for more compact PCB layouts. This is indispensable for meeting the ever-shrinking form factors of today's end products without compromising on power or thermal management.

ICGOOODFIND: The Infineon BSC040N10NS5ATMA1 is a top-tier power MOSFET that masterfully balances ultra-low conduction losses with fast switching capability. Its exceptional efficiency, high current handling, and robust packaging make it an ideal cornerstone for next-generation power conversion systems where performance, size, and thermal management are paramount.

Keywords: Power Efficiency, Low R DS(on), OptiMOS™ 5 Technology, High-Frequency Switching, SuperSO8 Package.