Infineon BSZ035N03MSG 30V N-Channel MOSFET Datasheet and Application Overview

The Infineon BSZ035N03MSG is a state-of-the-art N-Channel MOSFET engineered using Infineon’s advanced OptiMOS™ technology. Designed for operation with a drain-source voltage (VDS) of 30V, this power MOSFET is optimized for high-efficiency, low-voltage applications where space, thermal performance, and energy savings are critical.

A key highlight of this component is its exceptionally low on-state resistance (RDS(on)) of just 3.5 mΩ at a gate-source voltage of 10 V. This ultra-low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation in power switching circuits. Combined with its compact SuperSO8 (SSO-8) package, the MOSFET offers an outstanding power density, making it an ideal choice for space-constrained designs such as DC-DC converters, motor control systems, and synchronous rectification in switch-mode power supplies (SMPS).

The BSZ035N03MSG is also characterized by its low gate charge (QG) and fast switching capabilities, which help in reducing switching losses—especially critical in high-frequency applications. Its high peak current handling supports demanding transient conditions, while the qualified RoHS-compliant package ensures reliability under tough operating environments.

From an application perspective, this MOSFET is particularly suited for use in:

- Voltage Regulator Modules (VRMs) and point-of-load (POL) converters in computing and server motherboards.

- Motor drive and control circuits in automotive and industrial systems.

- Battery management and protection circuits in portable devices and power tools.

- Synchronous rectification in low-voltage AC-DC and DC-DC power converters.

Designers should pay close attention to proper gate driving, layout for thermal management, and protection against overcurrent and ESD, as outlined in the official datasheet.

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ICGOODFIND: The Infineon BSZ035N03MSG sets a high standard for performance in low-voltage power switching with its industry-leading RDS(on), thermal characteristics, and compact form factor—delivering efficiency and reliability for modern electronic systems.

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Keywords:

OptiMOS™, Low RDS(on), Synchronous Rectification, Power Efficiency, SuperSO8 Package